HX316C10FB/4
4GB 512M x 64-Bit DDR3-1600 CL10 240-Pin DIMM
HyperX HX316C10FB/4 is a 512M x 64-bit (4GB) DDR3-1600 CL10 SDRAM (Synchronous DRAM) 1Rx8 memory module, based on eight 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3-1600 at a low latency timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below.
Features
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component